savantic semiconductor product specification silicon npn power transistors 2n6288 2n6290 2N6292 d escription with to-220 package complement to pnp type: 2n6107; 2n6109 ;2n6111 applications power amplifier and switching circuits applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit 2n6288 40 2n6290 60 v cbo collector- base voltage 2N6292 open emitter 80 v 2n6288 30 2n6290 50 v ceo collector- emitter voltage 2N6292 open base 70 v v ebo emitter-base voltage open collector 5 v i c collector current 7 a i cm collector current-peak 10 a i b base current 3 a p t total power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance from junction to case 3.125 /w
savantic semiconductor product specification 2 silicon npn power transistors 2n6288 2n6290 2N6292 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n6288 30 2n6290 50 v ceo(sus) collector-emitter sustaining voltage 2N6292 i c =0.1a ;i b =0 70 v 2n6288 i c =3a;i b =0.3a 2n6290 i c =2.5a;i b =0.25a v cesat-1 collector-emitter saturation voltage 2N6292 i c =2a;i b =0.2a 1.0 v v cesat-2 collector-emitter saturation voltage i c =7a;i b =3a 3.5 v 2n6288 i c =3a ; v ce =4v 2n6290 i c =2.5a ; v ce =4v v be-1 base-emitter on voltage 2N6292 i c =2a ; v ce =4v 1.5 v v be-2 base-emitter on voltage i c =7a ; v ce =4v 3.0 v 2n6288 v ce =20v; i b =0 2n6290 v ce =40v; i b =0 i ceo collector cut-off current 2N6292 v ce =60v; i b =0 1.0 ma 2n6288 v ce =40v; v be =-1.5v v ce =30v; be =-1.5v,t c =125 0.1 2.0 2n6290 v ce =60v; v be =-1.5v v ce =50v; be =-1.5v,t c =125 0.1 2.0 i cex collector cut-off current 2N6292 v ce =80v; v be =-1.5v v ce =70v; be =-1.5v,t c =125 0.1 2.0 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma 2n6288 i c =3a ; v ce =4v 2n6290 i c =2.5a ; v ce =4v h fe-1 dc current gain 2N6292 i c =2a ; v ce =4v 30 150 h fe-2 dc current gain i c =7a ; v ce =4v 2.3 f t transition frequency i c =0.5a ; v ce =4v;f=1mhz 2.5 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2n6288 2n6290 2N6292 package outline fig.2 outline dimensions(unindicated tolerance: 0.10 mm)
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